Product Summary

The GT50J322 is a silicon N channel IGBT.

Parametrics

GT50J322 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES: ± 20 V; (3)Collector current, DC IC: 50. 1ms ICP: 100A; (4)Diode forward current. DC IF: 30. 1ms IFP: 60A; (5)Collector power dissipation(Tc = 25℃) PC: 130 W; (6)Junction temperature Tj: 150℃; (7)Storage temperature Tstg: -55 to 150℃.

Features

GT50J322 features: (1)FRD included between emitter and collector; (2)Enhancement mode type; (3)High speed IGBT; (4)Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A).

Diagrams

GT50J322 block diagram

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GT50J322
GT50J322

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1-10: $4.61
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