(China (Mainland))
Product Summary
The GT50J322 is a silicon N channel IGBT.
Parametrics
GT50J322 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES: ± 20 V; (3)Collector current, DC IC: 50. 1ms ICP: 100A; (4)Diode forward current. DC IF: 30. 1ms IFP: 60A; (5)Collector power dissipation(Tc = 25℃) PC: 130 W; (6)Junction temperature Tj: 150℃; (7)Storage temperature Tstg: -55 to 150℃.
Features
GT50J322 features: (1)FRD included between emitter and collector; (2)Enhancement mode type; (3)High speed IGBT; (4)Low saturation voltage: VCE (sat) = 2.2 V (typ.) (IC = 60 A).
Diagrams
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 GT50J322 |
Other |
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Data Sheet |
Negotiable |
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GT50G321 |
Other |
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Data Sheet |
Negotiable |
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GT50J121 |
Other |
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Data Sheet |
Negotiable |
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GT50J121(Q) |
Toshiba |
IGBT Transistors 600V/50A DIS |
Data Sheet |
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GT50J122 |
Other |
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Data Sheet |
Negotiable |
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GT50J301(Q) |
Toshiba |
IGBT Transistors 600V/150A DIS+FRD |
Data Sheet |
Negotiable |
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GT50J322 |
Other |
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Data Sheet |
Negotiable |
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