Product Summary

The IRF540N is a HEXFET power MOSFET. The IRF540N advanced HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRF540N, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF540N absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)IAR Avalanche Current: 16 A; (3)EAR Repetitive Avalanche Energy: 13 mJ; (4)dv/dt Peak Diode Recovery dv/dt: 7.0 V/ns; (5)TJ Operating Junction and -55 to + 175℃; (6)TSTG Storage Temperature Range: -55 to + 175℃.

Features

IRF540N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.

Diagrams

IRF540N block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF540N
IRF540N

International Rectifier

MOSFET N-CH 100V 33A TO-220AB

Data Sheet

1-350: $0.80
IRF540N_R4942
IRF540N_R4942

Fairchild Semiconductor

MOSFET TO-220AB N-Ch Power

Data Sheet

Negotiable 
IRF540NPBF
IRF540NPBF

International Rectifier

MOSFET MOSFT 100V 33A 44mOhm 47.3nC

Data Sheet

0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRF540NLPBF
IRF540NLPBF

International Rectifier

MOSFET MOSFT 100V 33A 44mOhm 47.3nC

Data Sheet

0-1: $1.51
1-25: $0.97
25-100: $0.70
100-250: $0.66
IRF540NL
IRF540NL


MOSFET N-CH 100V 33A TO-262

Data Sheet

Negotiable 
IRF540NS
IRF540NS

International Rectifier

MOSFET N-CH 100V 33A D2PAK

Data Sheet

1-300: $0.87
IRF540NSPBF
IRF540NSPBF

International Rectifier

MOSFET

Data Sheet

0-1: $1.73
1-25: $1.12
25-100: $0.74
100-250: $0.73
IRF540NSTRLPBF
IRF540NSTRLPBF

International Rectifier

MOSFET MOSFT 100V 33A 44mOhm 47.3nC

Data Sheet

0-1: $1.73
1-25: $1.12
25-100: $0.80
100-250: $0.76